AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: A simplified simulation approach.

Abstract Multichannel RF power amplifiers offer high frequency operation, current and power, combined with excellent linearity. 3D 2D simulation is used to investigate how changes in device architecture impact both the linearity off-state reliability, allowing an improved linear design which does not compromise reliability. Linearity assessed by extraction of g m 3 / ′ , third order intercept (TOI) as a function gate bias, using straightforward approximation computation time resource efficient compared full normally for these devices. Off-state reliability assumed be linked dielectric failure, hence peak electric field measure evaluated at corners edges simulation. It found that introducing channel number-dependent doping AlGaN/GaN-based superlattice structure can enable transconductance–linearity. also there strong increase TOI thickness or fin width increased. On other hand, maintain increased height essential reduce Finally, improving linearity, reduced OFF-state suggested.